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    High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator

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    Abstract—Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm2 · V−1 · s−1, a low threshold voltage of −1.89 V, and a low subthreshold slope swing of 310 mV/decade. The chemical composition and binding energy of solution-processed barium titanate thin films are analyzed through X-ray photoelectron spectroscopy. The matching surface energy on the surface of the barium titanate thin film is 43.12 mJ · m−2, which leads to Stranski–Krastanov mode growth, and thus, high mobility is exhibited in pentacene-based TFTs. Index Terms—Barium titanate, high field-effect mobility, high permittivity, organic thin-filmtransistor (OTFT), solution process

    Convergence of generalized AOR iterative method for linear systems with strictly diagonally dominant matrices

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    AbstractIn this paper, some improvements on Darvishi and Hessari [On convergence of the generalized AOR method for linear systems with diagonally dominant coefficient matrices, Appl. Math. Comput. 176 (2006) 128–133] are presented for bounds of the spectral radius of lω,r, which is the iterative matrix of the generalized AOR (GAOR) method. Subsequently, some new sufficient conditions for convergence of GAOR method will be given, which improve some results of Darvishi and Hessari [On convergence of the generalized AOR method for linear systems with diagonally dominant coefficient matrices, Appl. Math. Comput. 176 (2006) 128–133]
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